Literature cited
G. G. Gnesin, Silicon Carbide Materials [in Russian], Metallurgiya, Moscow (1977).
I. Patzak, K. Wohlleben, and K. Konopicky, “Studien uber die chemischen und mineralogischen Verschiebungen der Begleitkomponenten des SiC (Einfluss des Temperaturgefalles in hergestellten Block). I. Verunreinigungen im SiC,” Glass-Email-Keramo-Tech.,22, No. 1, 2–9 (1971).
V. K. Kazakov, P. S. Kislyi, V. I. Lapshin, et al., “Chemical and phase compositions of silicon nitride and silicon carbide powders,” Poroshk. Metall., No. 5, 1–3 (1978).
S. I. Vengin and A. S. Chistyakov, Technical Silicon [in Russian], Metallurgiya, Moscow (1972).
A. P. Garshin, V. V. Karlin, G. S. Oleinik, et al., Constructional Silicon Carbide Materials [in Russian], Mashinostroenie, Moscow (1975).
G. G. Gnesin, A. N. Pilyankevich, O. V. Kuznetsova, and G. S. Oleinik, “Structure formation in polycrystalline silicon carbide,” Poroshk. Metall., No. 4, 49–53 (1970).
V. R. Ren'yan, Technology of Semiconductor Silicon [in Russian], Metallurgiya, Moscow (1969).
G. V. Samsonov, L. A. Dvorina, and B. M. Rud', Silicides [in Russian], Metallurgiya, Moscow (1979).
Yu. A. Vodakov, G. A. Lomakina, E. N. Mokhov, et al., “Present-day views on the semiconductor properties of silicon carbide,” in: Problems in the Physics and Technology of Wide-Band Semiconductors, Transactions of the Second All-Union Conference on Wide-Band Semiconductors [in Russian], Leningrad (1979), pp. 122–136.
“Grinding materials,” GOST 3647-80 (1980).
“Crystalline silicon,” GOST 2169-69 (1969).
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Translated from Poroshkovaya Metallurgiya, No. 7(247), pp. 51–54, July, 1983.
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Gnesin, G.G., Shipilova, L.A. & Verkhovodov, P.A. Distribution of impurities in polycrystalline self-bonded SiC. Powder Metall Met Ceram 22, 557–560 (1983). https://doi.org/10.1007/BF00805653
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DOI: https://doi.org/10.1007/BF00805653