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Distribution of impurities in polycrystalline self-bonded SiC

  • Powder Metallurgical Materials, Parts, and Coatings
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Soviet Powder Metallurgy and Metal Ceramics Aims and scope

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Literature cited

  1. G. G. Gnesin, Silicon Carbide Materials [in Russian], Metallurgiya, Moscow (1977).

    Google Scholar 

  2. I. Patzak, K. Wohlleben, and K. Konopicky, “Studien uber die chemischen und mineralogischen Verschiebungen der Begleitkomponenten des SiC (Einfluss des Temperaturgefalles in hergestellten Block). I. Verunreinigungen im SiC,” Glass-Email-Keramo-Tech.,22, No. 1, 2–9 (1971).

    Google Scholar 

  3. V. K. Kazakov, P. S. Kislyi, V. I. Lapshin, et al., “Chemical and phase compositions of silicon nitride and silicon carbide powders,” Poroshk. Metall., No. 5, 1–3 (1978).

    Google Scholar 

  4. S. I. Vengin and A. S. Chistyakov, Technical Silicon [in Russian], Metallurgiya, Moscow (1972).

    Google Scholar 

  5. A. P. Garshin, V. V. Karlin, G. S. Oleinik, et al., Constructional Silicon Carbide Materials [in Russian], Mashinostroenie, Moscow (1975).

    Google Scholar 

  6. G. G. Gnesin, A. N. Pilyankevich, O. V. Kuznetsova, and G. S. Oleinik, “Structure formation in polycrystalline silicon carbide,” Poroshk. Metall., No. 4, 49–53 (1970).

    Google Scholar 

  7. V. R. Ren'yan, Technology of Semiconductor Silicon [in Russian], Metallurgiya, Moscow (1969).

    Google Scholar 

  8. G. V. Samsonov, L. A. Dvorina, and B. M. Rud', Silicides [in Russian], Metallurgiya, Moscow (1979).

    Google Scholar 

  9. Yu. A. Vodakov, G. A. Lomakina, E. N. Mokhov, et al., “Present-day views on the semiconductor properties of silicon carbide,” in: Problems in the Physics and Technology of Wide-Band Semiconductors, Transactions of the Second All-Union Conference on Wide-Band Semiconductors [in Russian], Leningrad (1979), pp. 122–136.

  10. “Grinding materials,” GOST 3647-80 (1980).

  11. “Crystalline silicon,” GOST 2169-69 (1969).

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Translated from Poroshkovaya Metallurgiya, No. 7(247), pp. 51–54, July, 1983.

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Gnesin, G.G., Shipilova, L.A. & Verkhovodov, P.A. Distribution of impurities in polycrystalline self-bonded SiC. Powder Metall Met Ceram 22, 557–560 (1983). https://doi.org/10.1007/BF00805653

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  • DOI: https://doi.org/10.1007/BF00805653

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