Conclusions
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1.
It is shown that in the wetting of silicon carbide materials by silicon the value ofφ in in the range Rz = 0.1–7μ is independent of the surface roughness of the base plate.
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2.
With increase in surface roughness contact angle hysteresis at first, in the range Rz = 0.1–0.5p, grows and then remains unchanged.
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For Part I see Poroshk. Metall., No. 10, 47–51 (1977).
Translated from Poroshkovaya Metallurgiya, No. 11(179), pp. 53–55, November, 1977.
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Yupko, V.L., Gnesin, G.G., Dyban', Y.P. et al. The wetting of self-bonded polycrystalline silicon carbide by silicon. Powder Metall Met Ceram 16, 860–862 (1977). https://doi.org/10.1007/BF00797043
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DOI: https://doi.org/10.1007/BF00797043