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The wetting of self-bonded polycrystalline silicon carbide by silicon

II. Effect of surface roughness of the base plate on wetting

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Soviet Powder Metallurgy and Metal Ceramics Aims and scope

Conclusions

  1. 1.

    It is shown that in the wetting of silicon carbide materials by silicon the value ofφ in in the range Rz = 0.1–7μ is independent of the surface roughness of the base plate.

  2. 2.

    With increase in surface roughness contact angle hysteresis at first, in the range Rz = 0.1–0.5p, grows and then remains unchanged.

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For Part I see Poroshk. Metall., No. 10, 47–51 (1977).

Translated from Poroshkovaya Metallurgiya, No. 11(179), pp. 53–55, November, 1977.

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Yupko, V.L., Gnesin, G.G., Dyban', Y.P. et al. The wetting of self-bonded polycrystalline silicon carbide by silicon. Powder Metall Met Ceram 16, 860–862 (1977). https://doi.org/10.1007/BF00797043

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  • DOI: https://doi.org/10.1007/BF00797043

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