Conclusions
The dielectric properties of silicon nitride are strongly affected by the presence of impurities, in particular oxygen. The dielectric permittivity of silicon nitride, calculated from data yielded by measurements at a frequency of 9.5 GHz, is 6.3–7.1, and the tangent of its dielectric loss angle, (5.3–9.7) · 10−3.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
Literature cited
D. M. Brown, P. V. Gray, F. K. Heumann, H. R. Phillipp, and E. A. Taft, “Properties of SixOyNz films on Si,” J. Electrochem. Soc.,115, No. 3, 1427–1429 (1968).
G. A. Vorob'ev, T. I. Danilina, V. P. Krivoshchekov, et al., “Effect of deposition pressure and temperature on the properties of films produced by reactive atomization,” Transactions of an All-Union Conference on the Physics of Dielectrics and the Prospects for Its Development [in Russian], Vol. 3, Leningrad (1973), pp. 35–36.
V. A. Vedernikov, T. I. Danilina, and E. V. Ivanova, “Effect of working gas composition in cathodic sputtering on the properties of thin silicon nitride films,” Transactions of an All-Union Conference on the Physics of Dielectrics and the Prospects for Its Development [in Russian], Vol. 3, Leningrad (1973), pp. 282–283.
E. V. Shchitova, N. A. Genkina, Yu. I. Chigirinskii, et al., “Effect of ionic bombardment on the structure and electrical properties of dielectric films,” Transactions of an All-Union Conference on the Physics of Dielectrics and the Prospects for Its Development [in Russian], Vol. 3, Leningrad (1973), pp. 278–279.
A. K. Sinha and T. E. Smith, “Electrical properties of Si-N films deposited on silicon from reactive plasma,” J. Appl. Phys.,49, No. 5, 2756–2760 (1978).
A. Rabenau, “Siliziumnitrid, ein keramisches Material für hohe Temperaturen,” Ber. Deut. Keram. Ges.,40, No. 1, 6–12 (1963).
J. S. Thorp and R. J. Sharif, “Dielectric properties of some hot-pressed nitrogen ceramics,” J. Mater. Sci.,12, No. 11, 2274–2280 (1977).
J. D. Walton, “Reaction of sintered silicon nitride for high temperature radome applications,” Am. Ceram. Soc. Bull.,53, No. 3, 255 (1974).
D. S. Thompson and P. L. Praft, “The structure of silicon nitride,” Sci. Ceram.,3, No. 1, 33–51 (1973).
S. Wild, P. Grievenson, and K. U. Jack, “The crystal structures of alpha and beta silicon and germanium nitrides,”Spec. Ceram., No. 5, 385–395 (1972).
H. F. Priest, F. C. Burns, G. L. Priest, and E. Skaar, “The oxygen content of alpha silicon nitride,” J. Am. Ceram. Soc.,56, No. 4, 395 (1973).
K. Kijima, K. Kato, Z. Inoue, and H. Tanaka, “Oxygen content of a-Si3N4 single crystals,” J. Mater. Sci., No. 10, 362–363 (1975).
K. Kato, Z. Inoue, K. Kijima, J. Kawacha, and H. Tanaka, “Structural approach to the problem of oxygen content in alpha silicon nitride,” J. Am. Ceram. Soc.,58, Nos. 3–4, 90–91 (1975).
D. B. Berks and D. G. Shulman, Progress in the Dielectrics Field [Russian translation], Vol. 1, Gosénergoizdat, Moscow-Leningrad (1962).
M. Mitomo, “Effect of Fe and Al addition on nitridation of silicon,” J. Mater. Sci.,12, No. 2, 273–276 (1977).
H. Feld, P. Ettmayer, and I. Petzenhauser, “Sauerstoffstabilisierung vonα-Si3N4,” Ber. Deut. Keram. Ges.,51, No. 5, 127–131 (1974).
Y. Hasegawa, Y. Inomata, K. Kilima, and T. Matsuyama, “Effect of Fe2O3 addition on the nitridation of silicon powder,” J. Ceram. Soc. Jpn.,85, No. 978, 83–90 (1977).
W. Engel, “Starting powder requirement for hot-pressing of silicon nitride,” Powder Metall. Int.,10, No. 3, 124–127 (1978).
Y. Oyama and O. Kamigaito, “A study of the sintered Si3N4-MgO system,” J. Ceram. Soc. Jpn.,81, No. 935, 290–293 (1973).
Yu. S. Borisov, A. L. Borisova, Yu. A. Kocherzhinskii, and E. A. Shishkin, “Reactions in the Ti-Si3N4 system under ordinary and plasma heating conditions,” Poroshk. Metall., No. 3, 63–69 (1978).
G. G. Gnesin and I. I. Osipova, Silicon Nitride and Materials Based on It. Investigation of Nitrides [in Russian], Kiev (1975).
K. J. Hüttingen, “The effect of oxygen traces on the nitriding of high-purity silicon between 1250 and 1380°C,” High Temp.-High Pressures,2, No. 1, 89–93 (1970).
H. J. Maguire and P. D. Augustus, “The detection of silicon-oxynitride layers on the surfaces of silicon nitride films by Auger electron emission,” J. Electrochem. Soc.,119, No. 6, 791–793 (1972).
V. K. Kazakov, P. S. Kislyi, V. I. Lapshin, et al., “Chemical and phase compositions of silicon nitride and silicon carbide powders,” Poroshk. Metall., No. 5, 1–3 (1978).
N. I. Krasotkina, “Stability of technical silicon nitride during heating in air and in a carbon monoxide atmosphere,” Ogneupory, No. 6, 33–39 (1967).
V. Ya. Petrovskii, E. I. Gervits, and L. B. Lebedinskaya, “Determination of the dielectric characteristics of powders at superhigh frequencies,” Poroshk. Metall., No. 3, 63–72 (1980).
I. A. Korneenko, “Mean values of parameters of inhomogeneous media,” Zh. Tekh. Fiz.,30, No. 1, 200–205 (1960).
T. N. Miller and Ya. P. Grabis, “Plasmochemical synthesis of refractory nitrides,” in: Methods of Preparation, Properties, and Fields of Application of Nitrides. Abstracts of Papers [in Russian], Zinatne, Riga (1980), p. 184.
Author information
Authors and Affiliations
Additional information
Translated from Poroshkovaya Metallurgiya, No. 9(213), pp. 62–70, September, 1980.
Rights and permissions
About this article
Cite this article
Petrovskii, V.Y., Gnesin, G.G., Kirilenko, V.M. et al. Dielectric characteristics of silicon nitride powders in the SHF range. Powder Metall Met Ceram 19, 632–639 (1980). https://doi.org/10.1007/BF00790556
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF00790556