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Behavior of nonporous silicon carbide in various gaseous media at high temperatures

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Soviet Powder Metallurgy and Metal Ceramics Aims and scope

Conclusions

  1. 1.

    The oxidation isotherms for monocrystals and polycrystalline specimens of silicon carbide, obtained under identical conditions, are rather close to each other. This indicates that the polycrystalline specimens were monolithic and that their oxidation occurred at the surface.

  2. 2.

    A comparison of the isotherms of silicon carbide oxidation in various media leads to the conclusion that complex processes involving the formation of SiC and its subsequent interaction with silicon carbide occur during the oxidation of SiO3. The phase composition of SiO2 and, consequently, the protective properties of the film depend on the nature of the oxidizing gas.

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Literature cited

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Authors and Affiliations

  1. Institute of the Physicochemical Principles of Mineral Ore Processing, Siberian Branch, Academy of Sciences of the USSR, USSR

    I. A. Yavorskii, V. I. Elchin, G. G. Gnesin & G. S. Oleinik

  2. Institute of Problems in the Science of Materials, Academy of Sciences of the UkrSSR, Ukraine

    I. A. Yavorskii, V. I. Elchin, G. G. Gnesin & G. S. Oleinik

Authors
  1. I. A. Yavorskii
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  2. V. I. Elchin
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  3. G. G. Gnesin
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  4. G. S. Oleinik
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Additional information

Translated from Poroshkovaya Metallurgiya, No. 1, pp. 77–82, January, 1968.

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Yavorskii, I.A., Elchin, V.I., Gnesin, G.G. et al. Behavior of nonporous silicon carbide in various gaseous media at high temperatures. Powder Metall Met Ceram 7, 59–63 (1968). https://doi.org/10.1007/BF00776111

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  • DOI: https://doi.org/10.1007/BF00776111

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