Abstract
X-ray photoemission was used to investigate the initial stages of rhenium disulfide oxidation and the altered reactivity and core-level electronic structure of defect sites produced by argon ion sputtering of single crystal and polycrystalline ReS2-basal plane surfaces. Oxidation of polycrystalline-ReS2 with O2 at 100–300 ° C produced a mixture of surface oxides containing rhenium in the + 4 and + 7 oxidation states. Oxidation was facilitated by the presence of low coordination defect sites and was reversible upon resulfidization with H2S/H2 at 300 °C.
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Davis, S.M. Photoemission studies of rhenium disulfide oxidation: Altered core-level structure and reactivity of defect sites. Catal Lett 2, 1–7 (1989). https://doi.org/10.1007/BF00765324
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DOI: https://doi.org/10.1007/BF00765324