Abstract
A thermodynamic analysis is made of the conditions under which compounds of high melting point can be efficiently transported in the gas phase by means of volatile compounds of limited stability. The possibilities of transporting silicon carbide, tantalum silicides, and uranium borides by this means are discussed to illustrate the method of calculation. A simple graphical method of constructing simultaneous tangents to three matched integral free energy diagrams is illustrated.
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References
C. B. Alcock andJ. H. E. Jeffes,Trans. Inst. Min. Met. 76 (1967) C245.
C. E. Myers andA. W. Searcy,J. Amer. Chem. Soc. 79 (1957) 526.
H. Schäfer andF. Kahlenberg,Z. anorg. Chem. 305 (1960) 179.
O. Kubaschewski, E. Ll. Evans, andC. B. Alcock, “Metallurgical Thermochemistry”, 4th edition (Pergamon, Oxford, 1947).
M. K. Rand andO. Kubaschewski, “The Thermochemical Properties of Uranium Compounds” (Oliver & Boyd, Edinburgh, 1963).
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Jeffes, J.H.E., Alcock, C.B. The production of refractory crystals by vapour transport reactions. J Mater Sci 3, 635–642 (1968). https://doi.org/10.1007/BF00757911
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DOI: https://doi.org/10.1007/BF00757911