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Internal structure of insulating and semiconducting synthetic diamonds

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Abstract

From optical studies on polished cross sections of synthetic diamond crystals the diamond growth on three different crystallographic planes can be distinguished within the crystals. Diamond growth on the cubic, octahedral, and dodecahedral faces each have a characteristic abrasion resistance, colour, and inclusion content. The differences in abrasion resistance do not appear to be dependent on the content of dispersed nitrogen. The characteristic growth on each crystal face allows the relative growth history of the three faces to be reconstructed.

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Kirk, R.S. Internal structure of insulating and semiconducting synthetic diamonds. J Mater Sci 8, 88–92 (1973). https://doi.org/10.1007/BF00755586

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  • DOI: https://doi.org/10.1007/BF00755586

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