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Lattice disorder in alumina single crystals produced by ion bombardment

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Abstract

The effect of 40 keV Kr ion bombardment of Al2O3 single crystals has been investigated using a Rutherford backscattering-channelling (RBC) technique. Curves of lattice disorder were found to be sigmoidal; the disorder increasing slowly up to a fluence of 1 × 1015 ions cm−2 and then accelerating to a saturation level at ∼ 1 × 1016 ions cm−2. These doses are about 100 times higher than comparable values found for elemental and III–V semiconductor compounds. The number of displaced atoms per incident ion estimated for an ion dose of 3 ×1014 ions cm−2 was found to be less than that calculated using Sigmund's equation. This difference is discussed in terms of defect recombination and re-ordering during bombardment. Measurements taken from the RBC random spectra before and after each bombardment have indicated that the stoichiometry of the alumina crystals did not alter even at the highest bombardment fluences used.

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Author notes

  1. H. M. Naguib

    Present address: Department of Metallurgy, Faculty of Engineering, Cairo University, Giza, Egypt

  2. J. F. Singleton

    Present address: Department of Electrical Engineering, University of Surrey, Guildford, Surrey, UK

Authors and Affiliations

  1. Department of Electrical Engineering, University of Salford, Lancashire, UK

    H. M. Naguib, J. F. Singleton, W. A. Grant & G. Carter

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  1. H. M. Naguib
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  2. J. F. Singleton
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  3. W. A. Grant
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  4. G. Carter
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Naguib, H.M., Singleton, J.F., Grant, W.A. et al. Lattice disorder in alumina single crystals produced by ion bombardment. J Mater Sci 8, 1633–1640 (1973). https://doi.org/10.1007/BF00754899

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