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Forbidden Raman scattering from acoustic plasma waves inP-typeA 3B5 semiconductors

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Abstract

Theoretical arguments and experimental evidence of acoustic plasmon existence in p-type A3B5 semiconductors are presented. The concept of the selective resonant enhancement of Raman Scattering is delivered which explains the observation of the forbidden acoustic plasmon feature. A theory of electrically screened flows of spin polarized electrons and holes is developed. Acoustic plasmon frequency is measured and the results are compared with calculated values. It is established that the scattering intensity in crossed scattering configuration is determined by a constant of spin dragging. Determination of this constant provides a valuable contribution to the theory of polarized electrons.

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Authors and Affiliations

  1. Technical State University, 195251, ST. Petersburg, Russia

    V. A. Voitenko

  2. A.F. Ioffe Physico-Technical Institute, 194021, St. Petersburg, Russia

    B. H. Bairamov, V. V. Toporov & V. K. Negoduiko

Authors
  1. V. A. Voitenko
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  2. B. H. Bairamov
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  3. V. V. Toporov
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  4. V. K. Negoduiko
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Voitenko, V.A., Bairamov, B.H., Toporov, V.V. et al. Forbidden Raman scattering from acoustic plasma waves inP-typeA 3B5 semiconductors. J Low Temp Phys 99, 121–141 (1995). https://doi.org/10.1007/BF00753624

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  • DOI: https://doi.org/10.1007/BF00753624

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