Journal of Structural Chemistry

, Volume 12, Issue 3, pp 505–506 | Cite as

Dependence of the zone structure and interzone transitions on pressure for tetrahedral semiconductors as determined by the equivalent orbital method

  • A. A. Levin
Brief Communications


Physical Chemistry Inorganic Chemistry Zone Structure Orbital Method Tetrahedral Semiconductor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Literature Cited

  1. 1.
    A. A. Levin, Dokl. Akad. Nauk SSSR,189, 808 (1968).Google Scholar
  2. 2.
    A. A. Levin, Phys. Stat. Solidi,36, 511 (1969).Google Scholar
  3. 3.
    A. A. Levin, Zh. Strukt. Khim.,11, 1101 (1970).Google Scholar
  4. 4.
    D. Brust and L. Liu, Phys. Rev.,154, 647 (1967).Google Scholar
  5. 5.
    L. I. Neuringer, Phys. Rev.,113, 1495 (1959).Google Scholar
  6. 6.
    M. Cardona and W. Paul, J. Phys. Chem. Solids,17, 138 (1960).Google Scholar
  7. 7.
    T. E. Slikhouse and H. G. Drickamer, J. Phys. Chem. Solids,7, 210 (1958).Google Scholar
  8. 8.
    W. Paul and G. L. Pearson, Phys. Rev.,98, 1755 (1955).Google Scholar
  9. 9.
    R. W. Keyes, Semiconductors and Semimetals, Vol. 4, New York-London (1968).Google Scholar
  10. 10.
    H. G. Drickamer, in: High Pressure Physics, (Swenson, ed.) [Russian translation], IL, Moscow (1963).Google Scholar
  11. 11.
    A. L. Edwards and H. G. Drickamer, Phys. Rev.,122, 1149 (1961).Google Scholar

Copyright information

© Consultants Bureau 1971

Authors and Affiliations

  • A. A. Levin

There are no affiliations available

Personalised recommendations