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Intensity dependence of the deep levels of semi-insulating GaAs on the annealing temperature

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Journal of Materials Science Letters

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Author notes

  1. S. D. Xu

    Present address: Institute of Semiconductors, Chinese Academy of Sciences, Beijing, People's Republic of China

Authors and Affiliations

  1. Department of Applied Physics, Hong Kong Polytechnic, Hung Hom, Kowloon, Hong Kong

    P. W. Chan, V. C. Lo & S. D. Xu

  2. Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong

    S. P. Wong

Authors
  1. P. W. Chan
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  2. V. C. Lo
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  3. S. D. Xu
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  4. S. P. Wong
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Chan, P.W., Lo, V.C., Xu, S.D. et al. Intensity dependence of the deep levels of semi-insulating GaAs on the annealing temperature. J Mater Sci Lett 11, 196–198 (1992). https://doi.org/10.1007/BF00741419

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  • DOI: https://doi.org/10.1007/BF00741419

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