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Transmission electron microscopy study on GaAs grown by molecular beam epitaxy at low substrate temperature

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Journal of Materials Science Letters

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Authors and Affiliations

  1. Institute of Physics, Chinese Academy of Sciences, 100080, Beijing, People's Republic of China

    H. Chen, F. H. Li, J. M. Zhou, C. Jiang, X. B. Mei & Y. Huang

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  1. H. Chen
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  2. F. H. Li
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  3. J. M. Zhou
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  4. C. Jiang
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  5. X. B. Mei
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  6. Y. Huang
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Chen, H., Li, F.H., Zhou, J.M. et al. Transmission electron microscopy study on GaAs grown by molecular beam epitaxy at low substrate temperature. J Mater Sci Lett 11, 1617–1619 (1992). https://doi.org/10.1007/BF00740851

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  • DOI: https://doi.org/10.1007/BF00740851

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