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Effect of electron bombardment on the stabilization of the characteristics of silicon detectors with a thin “dead” layer

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References

  1. R. A. Muminov, U. B. Dzhuraev, S. A. Radzhapov, and A. Sh. Iskanderov, “Low-resistancep-Si transit detectors,” At. Énerg.,67, No. 2, 139–140 (1989).

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Authors
  1. R. A. Muminov
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  2. V. N. Pod'yachev
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  3. V. T. Malaeva
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  4. U. B. Dzhuraev
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  5. M. M. Oksman
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  6. G. V. Ishmuratov
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Additional information

FTI NPO “Fizika-Solntse” Academy of Sciences of the Uzbek Republic. Translated from Atomnaya Énergiya, Vol. 75, No. 2, pp. 159–161, August, 1993.

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Muminov, R.A., Pod'yachev, V.N., Malaeva, V.T. et al. Effect of electron bombardment on the stabilization of the characteristics of silicon detectors with a thin “dead” layer. At Energy 75, 665–668 (1993). https://doi.org/10.1007/BF00739006

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  • DOI: https://doi.org/10.1007/BF00739006

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