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Characterization and crystallite growth of semiconducting high-temperature-stable Ga2O3 thin films

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Journal of Materials Science Letters

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References

  1. M. FLEISCHER and H. MEIXNER,Sensors Actuators 4 (1991) 437.

    Google Scholar 

  2. Idem, in Proceedings of the Third International Meeting on Chemical Sensors, Cleveland, September 1990, p. 201.

  3. Idem,,Sensors Actuators 6 (1992) 257.

    Google Scholar 

  4. J. GELLER,J. Chem. Phys 33 (1960) 676.

    Google Scholar 

  5. R. ROY, V. G. HILL and E. F. OSBORN,J. Amer. Ceram. Soc. 74 (1952) 719.

    Google Scholar 

  6. S. J. SCHNEIDER and J. L. WARING,J. Res. Natn. Bureau Standards USA A67 (1963) 19.

    Google Scholar 

  7. M. FLEISCHER, W. HANRIEDER and H. MEIXNER,Thin Solid Films 190 (1990) 93.

    Google Scholar 

  8. T. SAKAI and K. HIJIKATA,Proc. Inst. Natn. Sci. Nihon Univ. Tokyo 9 (1973) 325.

    Google Scholar 

  9. P. KOFSTAD, in “Nonstoichiometry, diffusion and electrical conductivity in binary metal oxides” (Krieger, Malabar, Florida, 1983) Chs 2 and 3.

    Google Scholar 

  10. T. HARTWIG and J. SCHOONMAN,J. Solid St. Chem. 23 (1978) 205.

    Google Scholar 

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Fleischer, M., Meixner, H. Characterization and crystallite growth of semiconducting high-temperature-stable Ga2O3 thin films. J Mater Sci Lett 11, 1728–1731 (1992). https://doi.org/10.1007/BF00736223

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  • DOI: https://doi.org/10.1007/BF00736223

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