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Effect of ion dose on X-ray rocking curves of28Si+-implanted (100) GaAs single crystals

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Journal of Materials Science Letters

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References

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Author notes

  1. M. Nagabhooshanam

    Present address: Department of Physics, Osmania University, 500 007, Hyderabad, India

Authors and Affiliations

  1. Departamento de Fisica, Universidade Federal do Parana, Caixa Postal 19081, 81531, Curitiba, Parana, Brazil

    M. Nagabhooshanam, I. Denicoló & V. R. Dumke

Authors
  1. M. Nagabhooshanam
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  2. I. Denicoló
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  3. V. R. Dumke
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Nagabhooshanam, M., Denicoló, I. & Dumke, V.R. Effect of ion dose on X-ray rocking curves of28Si+-implanted (100) GaAs single crystals. J Mater Sci Lett 11, 512–514 (1992). https://doi.org/10.1007/BF00731122

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  • DOI: https://doi.org/10.1007/BF00731122

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