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The defect structure of Te-doped GaAs after cadmium diffusion

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Journal of Materials Science Letters

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Author notes

  1. R. K. Ball

    Present address: Department of Physics, University of Warwick, Coventry

Authors and Affiliations

  1. Department of Metallurgy and Materials, University of Birmingham, P.O. Box 363, Birmingham, UK

    R. K. Ball & P. S. Dobson

Authors
  1. R. K. Ball
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  2. P. S. Dobson
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Ball, R.K., Dobson, P.S. The defect structure of Te-doped GaAs after cadmium diffusion. J Mater Sci Lett 1, 275–276 (1982). https://doi.org/10.1007/BF00728851

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  • DOI: https://doi.org/10.1007/BF00728851

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