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Measurement of the tunnel rate in SIS' tunnel junctions as function of bias voltage

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Abstract

Cryogenic detectors with superconducting tunnel junctions can provide an energy resolution improved by at least one order of magnitude compared with standard semiconductor detectors. While the detection principle was already demonstrated many years ago, the past years were dedicated to the transition from the laboratory sample to practical detectors. Our most favored detector design gives rise to tunnel junctions with electrodes of unequal energy gaps. In such hetero tunnel junctions bias conditions can be established which cause a negative signal current. We report the experimental verification of this effect, and we discuss the yield of charge signal of cryogenic detectors based upon superconducting tunnel junctions.

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Authors and Affiliations

  1. University of Oxford, Nuclear and Astrophysics Laboratory, Keble Road, OX1 3RH, Oxford, UK

    H. Kraus

  2. DRAM Development Program, Siemens Components, Inc., 1580 Route 52, ZIP 33A, Hopewell Junction, 12533, New York

    M. Gutsche

  3. Physik Department E15, Technische Universität München, JamesFranck-Strasse, D-85748, Garching, Germany

    P. Hettl

  4. University of California at Berkeley, 301 LeConte Hall, 94720, Berkeley, California

    J. Jochum

  5. Centre d'Etudes de Saclay CEA-SPEC, 91191, Gif-Sur-Yvette Cedex, France

    B. Kemmather

Authors
  1. H. Kraus
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  2. M. Gutsche
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  3. P. Hettl
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  4. J. Jochum
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  5. B. Kemmather
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Kraus, H., Gutsche, M., Hettl, P. et al. Measurement of the tunnel rate in SIS' tunnel junctions as function of bias voltage. J Supercond 9, 245–252 (1996). https://doi.org/10.1007/BF00728310

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  • DOI: https://doi.org/10.1007/BF00728310

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