Journal of Superconductivity

, Volume 8, Issue 3, pp 377–381 | Cite as

Molecular beam epitaxial growth of high-T c Bi-Sr-Ca-Cu-O Films

  • S. K. Ray
  • S. K. Mishra
  • A. Sarkar
  • A. Dhar
  • D. Bhattacharya
  • K. L. Chopra
Article
  • 20 Downloads

Abstract

Molecular beam epitaxy (MBE) has been used to grow high-temperature superconducting Bi-Sr-Ca-Cu-O films with adequate control over growth of number of unit layers. Oxide sources of Sr and Ca used for electron beam evaporation have been found to be useful for epitaxial growth of films. Deposited films show superconducting properties comparable to films deposited by using pure metals with a complicatedin situ oxidation technique. Optimum deposition and annealing conditions have been obtained to growc-axis-oriented 2212 phase BSCCO film.In situ reflection high-energy electron diffraction (RHEED) study of the films has revealed the growth of epitaxial films with atomically smooth surfaces.

Key words

Bi-Sr-Ca-Cu-O films epitaxial growth RHEED 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    H. Adachi, S. Kohiki, K. Sebsune, T. Mitsuyu, and K. Wasw,Jpn. J. Appl. Phys. 27, L1883 (1988).Google Scholar
  2. 2.
    G. F. Virshup, M. E. Klausmeier-Brown, I. Bozovic, and J. N. Eckstein,Appl. Phys. Lett. 60, 2288 (1992).Google Scholar
  3. 3.
    J. S. Moodera, A. M. Rao, A. Kussmaul, and P. M. Tendrow,Appl. Phys. Lett. 57, 2498 (1990).Google Scholar
  4. 4.
    M. Kanai, T. Kawai, and S. Kawai,Appl. Phys. Lett. 57, 198 (1990).Google Scholar
  5. 5.
    K. Endo, H. Yamasaki, S. Misawa, S. Yoshida, and K. Kajimura,Physica C 185–189, 1949 (1991).Google Scholar
  6. 6.
    S. Yokoyama, T. Ishibashi, M. Yamagami, and M. Kawabe,Jpn. J. Appl. Phys. 30, L106 (1991).Google Scholar
  7. 7.
    Y. Nakayama, I. Tsukada, and K. Uchinokura,J. Appl. Phys. 70, 4371 (1991).Google Scholar
  8. 8.
    M. Kawai, S. Watanabe, and T. Hanade,J. Cryst. Growth 112, 745 (1991).Google Scholar
  9. 9.
    I. Tsukada and K. Uchinokura,Jpn. J. Appl. Phys. 30, L1114 (1991).Google Scholar
  10. 10.
    D. G. Schlom, A. F. Marshall, J. T. Sizemore, Z. J. Chen, J. N. Eckstein, I. Bozovic, K. E. Von Dessonneck, J. S. Harris, Jr., and J. C. Bravman,J. Cryst. Growth 102, 361 (1991).Google Scholar
  11. 11.
    J. N. Eckstein, I. Bozovic, D. G. Schlom, and J. S. Harris, Jr.,J. Cryst. Growth 111, 937 (1991).Google Scholar
  12. 12.
    I. Tsukada, H. Watanabe, I. Terasaki, A. Maeda, and K. Uchinokura,Physica C 185–189, 2011 (1991).Google Scholar
  13. 13.
    S. Sakai, Y. Kasai, H. Tanoue, H. Matsuhata, P. Bodin, and T. Oohira,Physica C 185–189, 2013 (1991).Google Scholar
  14. 14.
    D. D. Berkley, A. M. Goldman, B. R. Johnson, J. Morton, and T. Wang,Rev. Sci. Instrum. 60, 3769 (1989).Google Scholar

Copyright information

© Plenum Publishing Corporation 1995

Authors and Affiliations

  • S. K. Ray
    • 1
    • 2
  • S. K. Mishra
    • 1
  • A. Sarkar
    • 1
    • 3
  • A. Dhar
    • 1
    • 2
  • D. Bhattacharya
    • 1
    • 3
  • K. L. Chopra
    • 1
    • 2
  1. 1.Microscience LaboratoryIndian Institute of TechnologyKharagpurIndia
  2. 2.Department of Physics and MeteorologyIndia
  3. 3.Materials Science CentreIndia

Personalised recommendations