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The defect structure of GaAs after selenium implantation through a Si3N4 layer

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Journal of Materials Science Letters

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References

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Author notes

  1. P. W. Hutchinson

    Present address: Cossor Electronics Ltd., Harlow, UK

  2. R. K. Ball

    Present address: Department of Physics, University of Warwick, Coventry, UK

Authors and Affiliations

  1. Department of Metallurgy and Materials, University of Birmingham, P.O. Box 363, Birmingham, UK

    P. W. Hutchinson, R. K. Ball & P. S. Dobson

  2. British Telecom Research Centre, Martlesham Heath, Ipswich, UK

    P. Leigh

Authors
  1. P. W. Hutchinson
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  2. R. K. Ball
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  3. P. S. Dobson
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  4. P. Leigh
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Hutchinson, P.W., Ball, R.K., Dobson, P.S. et al. The defect structure of GaAs after selenium implantation through a Si3N4 layer. J Mater Sci Lett 1, 457–460 (1982). https://doi.org/10.1007/BF00721928

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  • DOI: https://doi.org/10.1007/BF00721928

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