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Carbon concentration variation in polycrystalline silicon wafers

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Authors and Affiliations

  1. R. Boskovic Institute, PO Box 1016, YU-41000, Zagreb, Croatia, Yugoslavia

    B. Pivac

  2. Dipartimento di Fisica “A. Volta”, Universitá di Pavia, I-27100, Pavia, Italy

    A. Borghesi

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  1. B. Pivac
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  2. A. Borghesi
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Pivac, B., Borghesi, A. Carbon concentration variation in polycrystalline silicon wafers. J Mater Sci Lett 10, 1013–1015 (1991). https://doi.org/10.1007/BF00721831

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  • DOI: https://doi.org/10.1007/BF00721831

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