Journal of Materials Science Letters

, Volume 4, Issue 12, pp 1451–1453 | Cite as

The use of ellipsometry measurements in process control during phosphorus-ion implantation of silicon

  • Radu Marinescu
Article
  • 12 Downloads

Keywords

Polymer Silicon Process Control Ellipsometry Measurement 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    J. D. HOEPFNER, in “Ion Implantation: Equipment and Techniques”, edited by H. Ryssel and H. Glawischnig (Springer, Berlin, New York, 1983) pp. 327–30.Google Scholar
  2. 2.
    J. F. GIBBONS, W. S. JOHNSON and S. W. MYLROIE, “Projected Range Statistics: Semiconductors and Related Materials”, 2nd Edn (Halsted, Stroudsbury, Pennsylvania, 1975).Google Scholar
  3. 3.
    G. CARTER and W. A. GRANT, “Ion Implantation of Semiconductors” (Edward Arnold, London, 1976) pp. 109–51.Google Scholar
  4. 4.
    E. A. IRENE and W. D. DONG,J. Electrochem. Soc. 129 (1982) 1347.Google Scholar

Copyright information

© Chapman and Hall Ltd. 1985

Authors and Affiliations

  • Radu Marinescu
    • 1
  1. 1.Microelectronica-BucharestBucharestRomania

Personalised recommendations