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Journal of Materials Science Letters

, Volume 8, Issue 12, pp 1374–1377 | Cite as

Growth and misfit accommodation of β-SiC precipitates in silicon as implanted by oxygen

  • J. G. Antonopoulos
  • J. Stoemenos
  • C. Jaussaud
  • J. Margail
Article

Keywords

Oxygen Polymer Silicon Misfit Accommodation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman and Hall Ltd. 1989

Authors and Affiliations

  • J. G. Antonopoulos
    • 1
  • J. Stoemenos
    • 1
  • C. Jaussaud
    • 2
  • J. Margail
    • 2
  1. 1.Physics DepartmentUniversity of ThessalonikiThessalonikiGreece
  2. 2.Division d'Electronique de Technologie et d'Instrumentation CENCommissariat à l'Energie AtomiqueGrenobleFrance

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