Abstract
At temperature above about 500°C amorphous layers produced by self ion bombardment of (100) material regrow epitaxially on the underlying crystal, leaving relatively little residual disorder. The epitaxial regrowth from amorphous layers created by antimony implanted into (100) oriented silicon is found to be linear with time. At 500°C the rate on (100) Si is 12 Å/min. For a 60 minutes annealing, a considerable decrease in the amount of defects is observed in the lattice disorder profile.
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Boussaa, N., Behli, S., Benazzouz, C. et al. Isothermal annealing of antimony-implanted silicon and determination of the lattice disorder profiles. Adv Perform Mater 2, 415–419 (1995). https://doi.org/10.1007/BF00705320
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DOI: https://doi.org/10.1007/BF00705320