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Preparative synthesis of disilane from hexaethoxydisilane and diisobutylaluminum hydride

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Abstract

A preparative method for the synthesis of Si2H6 from Si2(OEt)6 and (i-Bu)2AlH is developed.

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References

  1. E. P. Belov, E. N. Lebedev, Yu. P. Grigorash, A. I. Gorbunov, and I. N. Litvinenko,Monosilan v Tekhnologii Poluprovodnikovykh Materialov, [Monosilane in the Technology of Semiconducting Materials], GNIIKhTEOS NIITEKhIM, Moscow, 1989, p. 34 (in Russian).

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  3. H. Azuhiko, V. Kadzo, and T. Masao, Patent 62-30612 Japan.

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Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 4, pp. 795–796, April, 1993.

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Korneev, N.N., Belik, G.I., Belov, E.P. et al. Preparative synthesis of disilane from hexaethoxydisilane and diisobutylaluminum hydride. Russ Chem Bull 42, 764–765 (1993). https://doi.org/10.1007/BF00704023

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  • DOI: https://doi.org/10.1007/BF00704023

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