Rapid thermal annealing of Ti Schottky contacts ton-GaAs

  • K. Prasad
  • L. Faraone
  • A. G. Nassibian


Ti Schottky contacts were formed onn-GaAs surfaces and were subjected to rapid thermal annealing (RTA) at various temperatures. Low temperature RTA (<500 °C) results in a reduction in the diode leakage currents and increase in the barrier voltage. High temperature RTA (>500 °C) results in progressive degradation of the diode parameters. The improvement in diode parameters is expected to be due to better adhesion of Ti Schottky contact resulting in a more intimate contact of the Schottky metal to the GaAs substrate.


GaAs Electronic Material Leakage Current Thermal Annealing Good Adhesion 
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Copyright information

© Chapman & Hall 1991

Authors and Affiliations

  • K. Prasad
    • 1
  • L. Faraone
    • 1
  • A. G. Nassibian
    • 1
  1. 1.Department of Electrical and Elecronic EngineeringThe University of Western AustraliaNedlandsAustralia

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