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Rapid thermal annealing of Ti Schottky contacts ton-GaAs

  • K. Prasad
  • L. Faraone
  • A. G. Nassibian
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  • 40 Downloads

Abstract

Ti Schottky contacts were formed onn-GaAs surfaces and were subjected to rapid thermal annealing (RTA) at various temperatures. Low temperature RTA (<500 °C) results in a reduction in the diode leakage currents and increase in the barrier voltage. High temperature RTA (>500 °C) results in progressive degradation of the diode parameters. The improvement in diode parameters is expected to be due to better adhesion of Ti Schottky contact resulting in a more intimate contact of the Schottky metal to the GaAs substrate.

Keywords

GaAs Electronic Material Leakage Current Thermal Annealing Good Adhesion 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Chapman & Hall 1991

Authors and Affiliations

  • K. Prasad
    • 1
  • L. Faraone
    • 1
  • A. G. Nassibian
    • 1
  1. 1.Department of Electrical and Elecronic EngineeringThe University of Western AustraliaNedlandsAustralia

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