Analysis of rocking curve width and bound exciton linewidth of MOCVD grown CdTe layers in relation with substrate type and crystalline orientation

  • A. Tromson-Carli
  • L. Svob
  • Y. Marfaing
  • R. Druilhe
  • F. Desjonqueres
  • R. Triboulet


X-ray double diffraction and photoluminescence experiments were performed on a series of CdTe layers grown by MOVPE on CdTe, CdZnTe and GaAs substrates. Some correlation appears between the measured rocking curve widths and impurity-bound exciton linewidth. To analyse these results a model relating the exciton linewidth to the average strain induced by an array of random dislocations has been developed. It appears that X-ray diffraction is also sensitive to non-random dislocation configurations which do not affect luminescence linewidth.


GaAs Electronic Material Average Strain GaAs Substrate Substrate Type 
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Copyright information

© Chapman & Hall 1991

Authors and Affiliations

  • A. Tromson-Carli
    • 1
  • L. Svob
    • 1
  • Y. Marfaing
    • 1
  • R. Druilhe
    • 1
  • F. Desjonqueres
    • 1
  • R. Triboulet
    • 1
  1. 1.Laboratoire de Physique des Solides de Bellevue, CNRSMeudon-CedexFrance

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