Analysis of rocking curve width and bound exciton linewidth of MOCVD grown CdTe layers in relation with substrate type and crystalline orientation

  • A. Tromson-Carli
  • L. Svob
  • Y. Marfaing
  • R. Druilhe
  • F. Desjonqueres
  • R. Triboulet
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  • 81 Downloads

Abstract

X-ray double diffraction and photoluminescence experiments were performed on a series of CdTe layers grown by MOVPE on CdTe, CdZnTe and GaAs substrates. Some correlation appears between the measured rocking curve widths and impurity-bound exciton linewidth. To analyse these results a model relating the exciton linewidth to the average strain induced by an array of random dislocations has been developed. It appears that X-ray diffraction is also sensitive to non-random dislocation configurations which do not affect luminescence linewidth.

Keywords

GaAs Electronic Material Average Strain GaAs Substrate Substrate Type 

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References

  1. 1.
    R. F. C. FARROW, G. R. JONES, G. M. WILLIAMS and I. M. YOUNG,Appl. Phys. Lett. 39 (1981) 954.Google Scholar
  2. 2.
    J. F. FAURIE and A. MILLION,Thin Solid Films 90 (1982) 107.Google Scholar
  3. 3.
    K. SUGIYAMA,J. Cryst. Growth 60 (1982) 450.Google Scholar
  4. 4.
    T. H. MYERS, Y. LO and J. F. SCHETZINA,J. Appl. Phys. 53 (1982) 9232.Google Scholar
  5. 5.
    K. NISHITANI, R. OHKATA and T. MUROTANI,J. Electron. Mater. 12 (1983) 619.Google Scholar
  6. 6.
    H. A. MAR, K. T. CHEE and N. SALANSKI,Appl. Phys. Lett. 44 (1984) 237; H. A. MAR and N. SALANSKI,J. Appl. Phys. 56 (1984) 2369.Google Scholar
  7. 7.
    R. N. BICKNELL, R. W. YANKA, N. C. GILES, J. F. SCHETZINA, T. F. MAGEE, C. LEUNG and H. KAWAYOSHI,Appl. Phys. Lett. 44 (1984) 313.Google Scholar
  8. 8.
    K. SUGIYAMA,Thin Solid Films 115 (1984) 97.Google Scholar
  9. 9.
    J. M. BALLINGALL, W. J. TAKEI and B. J. FELDMAN,Appl. Phys. Lett. 47 (1985) 599.Google Scholar
  10. 10.
    J. M. FRANCOU, K. SAMINADAYAR, J. L. PAUTRAT, J. P. GAILLIARD, A. MILLION and C. FONTAINE,J. Cryst. Growth 72 (1985) 220.Google Scholar
  11. 11.
    N. C. GILES-TAYLOR, R. N. BICKNELL, O. K. BLANKS, T. H. MYERS and J. F. SCHETZINA,J. Vac. Sci. Technology A3 (1985) 76.Google Scholar
  12. 12.
    Z. C. FENG, A. MASCARENHAS, W. J. CHOYKE, R. F. C. FARROW, F. A. SHIRLAND and W. J. TAKEI,Appl. Phys. Lett. 47 (1985) 24.Google Scholar
  13. 13.
    F. DAL'BO, G. LENTZ, N. MAGNEA, H. MARIETTE, LE SIDANG and J. L. PAUTRAT,J. Appl. Phys. 66 (1989) 1338.Google Scholar
  14. 14.
    J. B. MULLIN, S. J. C. IRIVINE and D. J. ASHEN,J. Cryst. Growth 55 (1981) 92.Google Scholar
  15. 15.
    W. E. HOKE, P. J. LEMONIAS and R. TRACZENSKI,Appl. Phys. Lett. 44 (1984) 1046.Google Scholar
  16. 16.
    S. K. GHANDHI and I. BHAT, ibid.45 (1984) 678.Google Scholar
  17. 17.
    C. H. WANG, K. Y. CHENG, S. J. YANG and F. C. HWANG,J. Appl. Phys. 58 (1985) 757.Google Scholar
  18. 18.
    S. K. GHANDHI, N. R. TASKAR and I. B. BHAT,Appl. Phys. Lett. 47 (1985) 742;49 (1986) 1290.Google Scholar
  19. 19.
    J. L. SCHMIT,J. Vac. Sci. Technol. A4 (1986) 2141.Google Scholar
  20. 20.
    J. THOMPSON, P. MACKETT, L. M. SMITH, D. J. COLE-HAMILTON and D. V. SHENAI-KHATKATE,J. Cryst. Growth 86 (1988) 233.Google Scholar
  21. 21.
    P. L. ANDERSON,J. Vac. Sci. Technol. A4 (1986) 2162.Google Scholar
  22. 22.
    P. D. BROWN, J. E. HAILS, G. J. RUSSEL and J. WOODS,Appl. Phys. Lett. 50 (1987) 1144.Google Scholar
  23. 23.
    Z. C. FENG, M. J. BEVAN, W. J. CHOYKE and S. V. KRISHNASWAMY,J. Appl. Phys. 64 (1988) 2595.Google Scholar
  24. 24.
    H. SHTRIKMAN, M. OZON, A. RAIZMAN and G. CINADER,J. Electron. Mater. 17 (1988) 105.Google Scholar
  25. 25.
    R. DRUILHE, F. DESJONQUERES, A. KATTY, A. TROMSON-CARLI, D. LORANS, L. SVOB, A. HEURTEL, Y. MARFAING and R. TRIBOULET,J. Cryst. Growth 101 (1990) 73.Google Scholar
  26. 26.
    C. ONODERA, M. EKAWA and T. TAGUCHI, ibid.99 (1990) 459.Google Scholar
  27. 27.
    D. S. SCHIKORA, H. SITTER, J. HUMENBERGER and K. LISCHKA,Appl. Phys. Lett. 48 (1986) 1276; H. SITTER, K. LISCHKA, W. FASCHINGER, J. WOLFRUM, H. PASCHER and J. L. PAUTRAT,J. Cryst. Growth 86 (1988) 377.Google Scholar
  28. 28.
    R. KORENSTEIN and B. MaCLEOD,J. Cryst. Growth 86 (1988) 383.Google Scholar
  29. 29.
    H. TATSUOKA, H. KUWABARA, H. FUJIYASU and Y. NAKANISHI,J. Appl. Phys. 65 (1989) 2073.Google Scholar
  30. 30.
    K. LISCHKA, E. J. FANTNER, T. W. RYAN and H. SITTER,Appl. Phys. Lett. 55 (1989) 1309.Google Scholar
  31. 31.
    R. F. C. FARROW,J. Vac. Sci. Technol. A3 (1985) 60.Google Scholar
  32. 32.
    S. B. QADRI, M. FATEMI and J. H. DINAN,Appl. Phys. Lett. 48 (1986) 239.Google Scholar
  33. 33.
    Z. C. FENG, A. MASCARENHAS and W. J. CHOYKE,J. Lum. 35 (1986) 329.Google Scholar
  34. 34.
    R. TRIBOULET and Y. MARFAING,J. Cryst. Growth 51 (1981) 89; E. MOLVA, J. P. CHAMONAL and J. L. PAUTRAT,Phys. Stat. Sol. B109 (1982) 635.Google Scholar
  35. 35.
    H. A. MAR, N. SALANSKY and K. T. CHEE,Appl. Phys. Lett. 44 (1984) 898.Google Scholar
  36. 36.
    N. OTSUKA, L. A. KOLODZIESKI, R. L. GUNSHOR, S. DATTA, R. N. BICKNELL and J. F. SCHETZINA, ibid.46 (1985) 860.Google Scholar
  37. 37.
    P. Y. LU, L. M. WILLIAMS and S. N. G. CHU,J. Vac. Sci. Technol. A4 (1986) 2137.Google Scholar
  38. 38.
    R. D. FELDMAN, R. F. AUSTIN, D. W. KISKER, K. S. JEFFERS and P. M. BRIDENBAUGH,Appl. Phys. Lett. 48 (1986) 249.Google Scholar
  39. 39.
    J. P. FAURIE, C. HSU, S. SIVANATHAN and Y. CHU,Surf. Sci. 168 (1986) 473.Google Scholar
  40. 40.
    G. COHEN-SOLAL, F. BAILLY and M. BARBÉ,Appl. Phys. Lett. 49 (1986) 1519.Google Scholar
  41. 41.
    Z. C. FENG, M. G. BURKE and W. J. CHOYKE,Appl. Phys. Lett. 53 (1988) 128.Google Scholar
  42. 42.
    K. GUERGOURI, Y. MARFAING, R. TRIBOULET and A. TROMSON-CARLI,Revue Phys. Appl. 25 (1990) 481.Google Scholar
  43. 43.
    M. J. HORDON and B. L. AVERBACH,Acta Metall. 9 (1961) 237.Google Scholar
  44. 44.
    P. GAY, P. B. HIRSCH and A. KELLY, ibid.1 (1953) 315.Google Scholar
  45. 45.
    C. O. DUNN and E. F. KOCH, ibid.5 (1957) 548.Google Scholar
  46. 46.
    G. E. PIKUS and G. L. BIR,Sov. Phys. Sol. State 1 (1960) 1502.Google Scholar
  47. 47.
    J. P. HIRTH and J. LOTTE, “Theory of Dislocations” (John Wiley, New York, 1982).Google Scholar
  48. 48.
    H. J. MC SKIMIN and D. G. THOMAS,J. Appl. Phys. 33 (1962) 56.Google Scholar
  49. 49.
    H. MATHIEU, J. ALLEGRE, A. CHATT, P. LEFEBVRE and J. P. FAURIE,Phys. Rev. B38 (1988) 7740.Google Scholar

Copyright information

© Chapman & Hall 1991

Authors and Affiliations

  • A. Tromson-Carli
    • 1
  • L. Svob
    • 1
  • Y. Marfaing
    • 1
  • R. Druilhe
    • 1
  • F. Desjonqueres
    • 1
  • R. Triboulet
    • 1
  1. 1.Laboratoire de Physique des Solides de Bellevue, CNRSMeudon-CedexFrance

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