Abstract
Ti Schottky contacts were formed on n-GaAs surfaces and irradiated using a low energy scanned electron beam at various fluence levels from 1015 to 1018 cm−2. For fluence levels up to 1017 cm−2, the Schottky contacts were found to exhibit a reduction in their leakage currents and increased barrier voltages. For fluence levels in excess of 1017 cm−2, the Schottky diodes were found to exhibit significantly increased leakage currents and barrier voltages. The changes in leakage currents were consistent with the changes in their respective interface state density (D it) values. However, the electron beam irradiation had little or no effect on the diode ideality factorn.
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Prasad, K. Scanned electron beam irradiation of Ti Schottky contacts to n-GaAs. J Mater Sci: Mater Electron 3, 16–19 (1992). https://doi.org/10.1007/BF00701088
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DOI: https://doi.org/10.1007/BF00701088