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Mathematical simulation of gas-phase deposition of epitaxial silicon films in the Si-C-H and Si-H systems

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Abstract

The effect of experimental conditions on the magnitude and uniformity of the deposition rate of epitaxial silicon obtained by chemical deposition from the gas phase in the SiCl4-H2, SiHCl3-H2, and SiH4-H2 systems (in the temperature ranges from 1300 to 1520 K for the chloride and 1270 to 1370 K for the silane systems) has been examined. Chloride and silane processes are compared.

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Authors and Affiliations

  1. A. V. Lykov Heat and Mass Transfer Institute, Academy of Sciences of Belarus' Republic, 15 ul P. Brovki, 220072 Minsk, Belarus'

    V. G. Minkina

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  1. V. G. Minkina
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Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 7, pp. 1217–1222, July, 1995.

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Minkina, V.G. Mathematical simulation of gas-phase deposition of epitaxial silicon films in the Si-C-H and Si-H systems. Russ Chem Bull 44, 1171–1176 (1995). https://doi.org/10.1007/BF00700883

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  • DOI: https://doi.org/10.1007/BF00700883

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