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Application of chrysotile-derived polymer to microlithography

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Abstract

A novel silicon-containing polymer, SCMR (silylated clay minerals resist), has been developed for microlithography. SCMR was synthesized by reaction of the silicate sheet of chrysotile with dimethylvinylchlorosilane (DMVCS) and/or trimethylchlorosilane (TMCS). The structure of SCMR is estimated as a mixture of R1R2R3SiO, SiO3(OH), and SiO4 (R1, R2, R3: methyl or vinyl group). The silicon content of SCMR is 40–45 wt% and its O2-RIE resistance is 50 times as high as that of a novolak-based photoresist. SCMR has a high thermal stability and its profiles are not changed up to 300°C. SCMR is a negative working E-beam resist and has a high sensitivity, 2 µC/cm2, and a high resolution, 0.2-µm line and space. CMPR (clay minerals positive resist), consisting of SCMR and an acid generator, has been developed for a positive working E-beam resist. It has a high sensitivity, 0.2 µC/cm2.

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Authors and Affiliations

  1. Semiconductor Technology Laboratory, Oki Electric Industry Co. Ltd., 550-5 Higashiasakawa, Hachioji-shi, 193, Tokyo, Japan

    Yoshio Yamashita

  2. Faculty of Engineering, Nagoya University, Furo-cho Chikusa-ku, 464, Nagoya-shi, Japan

    Meisetsu Kaziwara

Authors
  1. Yoshio Yamashita
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  2. Meisetsu Kaziwara
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Yamashita, Y., Kaziwara, M. Application of chrysotile-derived polymer to microlithography. J Inorg Organomet Polym 2, 129–141 (1992). https://doi.org/10.1007/BF00696540

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  • DOI: https://doi.org/10.1007/BF00696540

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