Preparation of ferroelectric BaTiO3 thin films by metal organic chemical vapour deposition

  • C. H. Lee
  • S. J. Park


Polycrystalline BaTiO3 thin films have been successfully prepared on (100) silicon substrates at temperatures under 600° C by metal organic chemical vapour deposition using barium acetylacetonate and diisopropoxy-titanium-bis-(acetylacetonate). To vaporize the barium acetylacetonate, which is nonvolatile under 300° C and thermally unstable, an ultrasonic spraying technique was used. The substrate temperature had a great influence on the structure and composition of films and the single-phase BaTiO3 films could be prepared at 500° C. At temperatures above 550° C the reaction between the film and the silicon substrate occurred to a large extent. The polarization-electric field (P-E) hysteresis loops and counter-clockwise direction of hysteresis in the high-frequency (1 MHz)C-V characteristics indicate that the BaTiO3 films deposited on silicon using the present method are ferroelectric.


Silicon Thin Film Barium Electronic Material Hysteresis Loop 
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  1. 1.
    M. H. FRANCOMBE,Thin Solid Films 13 (1972) 413.Google Scholar
  2. 2.
    J. F. SCOTT and C. A. P. DE ARAUJO,Science 246 (1989) 1400.Google Scholar
  3. 3.
    J. K. G. PANITZ and C. C. HU,J. Vac. Sci. Technol. 16 (1979) 315.Google Scholar
  4. 4.
    K. SREENIVAS and A. MANSINGH, in “Proceedings of the 6th IEEE International Symposium on Applied Ferroelectrics” (IEEE, Piscataway, New Jersey, 1986) p. 602.Google Scholar
  5. 5.
    Y. MATSUI, M. OKUYAMA, M. NODA and Y. HAMAKAWA,Appl. Phys. A28 (1982) 161.Google Scholar
  6. 6.
    T. L. ROSE, E. M. KELLIHER, A. N. SCOVILLE and S. E. STONE,J. Appl. Phys. 55 (1984) 3706.Google Scholar
  7. 7.
    H. LUTZ,Z. Anorg. Allg. Chem. 356 (1968) 132.Google Scholar
  8. 8.
    E. W. BERG and F. R. HARTLAGE Jr,Anal. Chim. Acta 34 (1966) 46.Google Scholar
  9. 9.
    E. W. BERG and N. M. HERRERA, ibid.60 (1972) 117.Google Scholar
  10. 10.
    G. BLANDENET, M. COURT and Y. LAGARDE,Thin Solid Films 77 (1981) 81.Google Scholar
  11. 11.
    J. C. VIGUIE and J. SPITZ,J. Electrochem. Soc. Solid State Sci. Technol. 122 (1975) 585.Google Scholar
  12. 12.
    A. YAMAMOTO and S. KAMBARA,J. Amer. Chem. Soc. 79 (1957) 4344.Google Scholar
  13. 13.
    T. NAKATOMO, T. KOSAKA, S. OMORI and O. OMOTO,Ferroelectrics 37 (1981) 681.Google Scholar
  14. 14.
    G. I. FINCH, H. WILMAN and L. YANG,Discuss. Faraday Soc. 1 (1947) 144.Google Scholar
  15. 15.
    D. M. EVANS and H. WILMAN,Acta Crystallogr. 5 (1952) 731.Google Scholar
  16. 16.
    K. R. DIXIT,Phil. Mag. 16 (1933) 1049.Google Scholar
  17. 17.
    K. L. CHOPRA, in “Thin Film Phenomena” (McGraw-Hill, New York, 1969) p. 185.Google Scholar
  18. 18.
    S. HOFMANN, in “Practical Surface Analysis by Auger and X-ray Photoelectron Spectroscopy”, edited by D. Briggs and M. P. Seah (Wiley, New York, 1983) p. 141.Google Scholar
  19. 19.
    B. M. PARK, MSc. thesis, Seoul National University (1989).Google Scholar
  20. 20.
    S. HOFMANN,J. Vac. Sci. Technol. A4 (1986) 2789.Google Scholar
  21. 21.
    A. S. GROVE, in “Physics and Technology of Semiconductor Devices” (Wiley, New York, 1967) p. 271.Google Scholar
  22. 22.
    C. B. SAWYER and C. H. TOWER,Phys. Rev. 35 (1930) 269.Google Scholar
  23. 23.
    J. H. SLACK and J. C. BURFOOT,J. Phys. C4 (1971) 898.Google Scholar
  24. 24.
    V. S. DHARMADHIKARI and W. W. GRANNEMANN,J. Appl. Phys. 53 (1982) 8988.Google Scholar
  25. 25.
    J. C. CRAWFORD and F. L. ENGLISH,IEEE Trans. Electron. Devices ED-16 (1969) 525.Google Scholar
  26. 26.
    E. KLAUSMANN, W. R. FAHRNER and D. BRÄUNIG, in “Instabilities in Silicon Devices, Silicon Passivation and Related Instabilities”, Vol. 2, edited by G. Barbottin and A. Vapaille (Elsevier Science, North-Holland, 1989) p. 305.Google Scholar

Copyright information

© Chapman and Hall Ltd. 1990

Authors and Affiliations

  • C. H. Lee
    • 1
  • S. J. Park
    • 1
  1. 1.Department of Inorganic Materials EngineeringSeoul National UniversitySeoulKorea

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