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Properties of WN x /GaAs Schottky contacts prepared by ion implantation of nitrogen

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Abstract

The formation of WN x /GaAs Schottky contacts using selective ion implantation of nitrogen into the sputtered tungsten film has been demonstrated. The contacts were characterized by Auger electron spectroscopy and current-voltage measurements. The composition of WN x films and the thermal stability of WN x /GaAs contacts were investigated. Good thermal stability of WN x /GaAs contacts compared with a W/GaAs contact was observed after capless rapid thermal annealing at 450, 800 and 950°C for 10 s.

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Authors and Affiliations

  1. Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 842 39, Bratislava, Czecho-Slovakia

    T. Lalinsky, J. Kuzmík, D. Gregušová & Ž. Mozolová

  2. Department of Microelectronics, Slovak Technical University, Ilkovičova 3, 812 19, Bratislava, Czecho-Slovakia

    J. Breza & M. Feciško

  3. Department of Microelectronics, Faculty of Electrical Engineering, Czech Technical University, Suchbatárova 2, 160 00, Praha 6, Czecho-Slovakia

    P. Seidl

Authors
  1. T. Lalinsky
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  2. J. Kuzmík
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  3. D. Gregušová
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  4. Ž. Mozolová
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  5. J. Breza
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  6. M. Feciško
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  7. P. Seidl
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Lalinsky, T., Kuzmík, J., Gregušová, D. et al. Properties of WN x /GaAs Schottky contacts prepared by ion implantation of nitrogen. J Mater Sci: Mater Electron 3, 157–161 (1992). https://doi.org/10.1007/BF00695512

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  • DOI: https://doi.org/10.1007/BF00695512

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