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Photonic switching in GaAlAs optical strip waveguides by photo-induced electroabsorption

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Abstract

GaAlAs strip waveguides embedded in unbiased pn-junctions are employed for all-optical switching. The underlying physical mechanism is a combination of the photovoltaic effect and the conventional Franz-Keldysh effect, thus it is called the photo-induced Franz-Keldysh effect or photo-induced electroabsorption. Experimental as well as theoretical results are given and show good agreement. In the experiments the transmitted light power of a probe beam is switched by 3 dB due to an injected control beam at input light power levels of about 0.5 mW each. The dynamics of this all-optical switch is limited by RC time constants.

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Authors and Affiliations

  1. Institut für Hochfrequenztechnik der Technischen Universität, Schleinitzstrasse 21-24, Postfach 3329, D-3300, Braunschweig, Fed. Rep. Germany

    H. Fouckhardt & K. J. Ebeling

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  1. H. Fouckhardt
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  2. K. J. Ebeling
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Fouckhardt, H., Ebeling, K.J. Photonic switching in GaAlAs optical strip waveguides by photo-induced electroabsorption. Appl. Phys. B 45, 163–169 (1988). https://doi.org/10.1007/BF00695286

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  • DOI: https://doi.org/10.1007/BF00695286

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