Novel GaAs current-injection negative differential resistance transistor

  • K. F. Yarn
  • Y. H. Wang
  • C. Y. Chang
  • C. S. Chang


GaAs current-injection negative differential resistance transistors using n+-i-p+-i-n+ structure prepared by molecular beam epitaxy are presented. For p+ with a sheet concentration of 1013 cm−2, a negative differential resistance region is revealed for a base currentIB<100 µA. The peak to valley current ratios are about 8 at room temperature. This is proposed to be due to the bipolar-unipolar transition reaction. WhenIB>=100 µA, the proposed device operates as a conventional bipolar transistor.


GaAs Electronic Material Molecular Beam Epitaxy Molecular Beam Current Ratio 
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Copyright information

© Chapman and Hall Ltd 1990

Authors and Affiliations

  • K. F. Yarn
    • 1
  • Y. H. Wang
    • 1
  • C. Y. Chang
    • 2
  • C. S. Chang
    • 3
  1. 1.Department of Electrical EngineeringNational Cheng Kung UniversityTainanTaiwan
  2. 2.Institute of ElectronicsNational Chiao Tung UniversityHsinchuTaiwan
  3. 3.AvantekSanta ClaraUSA

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