CuInSe2 thin films by d.c. and pulse-plated electrodeposition

  • M. Boumerzoug
  • Lê. H. Dao


CuInSe2 thin films were prepared by electrodeposition from aqueous solution, containing CuSO4, InCl3 and SeO2 under d.c. step pulse-voltage on d.c., and pulse-plating conditions. The films were characterized by scanning electron microscopy, energy dispersive spectrometry and X-ray diffraction. The influence of deposition technique on film composition, morphology and structure were studied. Heat treatment of pulse-plated films under vacuum resulted in the formation of CuInSe2 with single-phase chalcopyrite structure.


Microscopy Electron Microscopy Scanning Electron Microscopy Aqueous Solution Heat Treatment 
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Copyright information

© Chapman and Hall Ltd 1990

Authors and Affiliations

  • M. Boumerzoug
    • 1
  • Lê. H. Dao
    • 1
  1. 1.Laboratoire de Recherche sur les Matériaux Avancés, INRS-EnergieInstitut National de la Recherche ScientifiqueVarennesCanada

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