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Topographical studies of semiconductor surfaces by using a combined photo-acoustoelectric method

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Abstract

A simple and rapid nondestructive method for a qualitative analysis of the electronic topography of semiconductor surfaces is presented, which is based on the transverse acoustoelectric effect. The method allows to follow the spatial distribution of the density and the relaxation time of energy states at the surface of the semiconductor and can be used to check its homogeneity as well as to visualize surface electronic structures.

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Author notes

  1. V. L. Strashilov

    Present address: Department of Solid State Physics, Faculty of Physics, BG-1126, Sofia University, Sofia, Bulgaria

Authors and Affiliations

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Lenin Blvd, BG-1784, Sofia, Bulgaria

    V. L. Strashilov, L. L. Konstantinov & O. Ivanov

Authors
  1. V. L. Strashilov
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  2. L. L. Konstantinov
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  3. O. Ivanov
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Strashilov, V.L., Konstantinov, L.L. & Ivanov, O. Topographical studies of semiconductor surfaces by using a combined photo-acoustoelectric method. Appl. Phys. B 43, 17–21 (1987). https://doi.org/10.1007/BF00693967

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  • DOI: https://doi.org/10.1007/BF00693967

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