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Maskless photoassisted etching of N-type Ga0.47In0.53As in basic solutions

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Abstract

The maskless photoassisted etching of n-type Ga0.47In0.53As is examined for basic KOH solutions in comparison with GaAs and InP material. The etch rate increases with laser intensity and with carrier concentration up to a saturation value. The best etch rate is obtained with molar KOH in ethyl alcohol (7 μms−1 for laser intensity 104 W cm−2). Selective etching have been realized on heterojunction in order to isolate p-n junctions without the help of masks.

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  1. CNET/LAB/ICM/TOH, Route de Trégastel, BP 40, F-22301, Lannion, France

    D. Moutonnet

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  1. D. Moutonnet
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Moutonnet, D. Maskless photoassisted etching of N-type Ga0.47In0.53As in basic solutions. Appl. Phys. B 42, 221–223 (1987). https://doi.org/10.1007/BF00693939

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  • DOI: https://doi.org/10.1007/BF00693939

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