Abstract
We propose a new principle for a low temperature semiconductor detector of charged particles with possibly submicron lateral resolution based on point contacts formed in the 2-dimensional electron gas (2DEG) of a GaAs-AlxGa1-xAs heterostructure using split-gates. The detector operates up to liquid nitrogen temperatures. Impinging particles excite locally extra donors in the doping layer of the heterostructure. By measuring simultaneous increase in the conductances of 3 point contacts due to the impacts of charged particles the position of penetration is calculated using the Thomas-Fermi approximation for screening in 2DEG.
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Baklanov, K., Taboryski, R. & Lindelof, P.E. New type of charged-particles detector based on point contacts formed in a GaAs-AlGaAs heterostructure by split-gates. J Low Temp Phys 93, 739–744 (1993). https://doi.org/10.1007/BF00693505
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DOI: https://doi.org/10.1007/BF00693505