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Journal of Low Temperature Physics

, Volume 93, Issue 3–4, pp 739–744 | Cite as

New type of charged-particles detector based on point contacts formed in a GaAs-AlGaAs heterostructure by split-gates

  • K. Baklanov
  • R. Taboryski
  • P. E. Lindelof
Assorted Topics
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Abstract

We propose a new principle for a low temperature semiconductor detector of charged particles with possibly submicron lateral resolution based on point contacts formed in the 2-dimensional electron gas (2DEG) of a GaAs-AlxGa1-xAs heterostructure using split-gates. The detector operates up to liquid nitrogen temperatures. Impinging particles excite locally extra donors in the doping layer of the heterostructure. By measuring simultaneous increase in the conductances of 3 point contacts due to the impacts of charged particles the position of penetration is calculated using the Thomas-Fermi approximation for screening in 2DEG.

PACS numbers

29.40.Gx, 29.40.Wk 

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Copyright information

© Plenum Publishing Corporation 1993

Authors and Affiliations

  • K. Baklanov
    • 1
  • R. Taboryski
    • 1
  • P. E. Lindelof
    • 1
  1. 1.Niels Bohr Institute, Ørsted LaboratoryUniversity of CopenhagenCopenhagen ØDenmark

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