Journal of Low Temperature Physics

, Volume 93, Issue 5–6, pp 935–944 | Cite as

The influence of3He on the wetting of4He to a cesiated substrate

  • K. S. Ketola
  • R. B. Hallock


We report preliminary measurements of the influence of 3 He in the adsorption of 4 He to a cesiated substrate by the use of quartz crystal resonance techniques. When compared with the case of pure 4 He, the presence of 3 He in the apparatus induces the wetting of the mixture film to Cesium at low temperatures. The wetting is hysteretic, beginning at a concentration-dependent Tc on cooling with continued wetting for T>Tc on warming. The temperatures Tc are given as a function of the total concentration of 3 He in the apparatus.

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Copyright information

© Plenum Publishing Corporation 1993

Authors and Affiliations

  • K. S. Ketola
    • 1
  • R. B. Hallock
    • 1
  1. 1.Laboratory for Low Temperature Physics, Department of Physics and AstronomyUniversity of MassachusettsAmherstUSA

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