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Journal of Low Temperature Physics

, Volume 54, Issue 3–4, pp 267–275 | Cite as

Investigation of the hexagonal NbGe2 phase

  • M. Kloska
  • E. L. Haase
Article

Abstract

NbGe2 thin films and hot pressed powder samples were made over a wide range of preparation conditions. Resistive and inductiveTc values, residual resistance ratios, specific resistances, and grain sizes were determined as a function of the substrate temperature during evaporation. C40-NbGe2 thin films have a maximum resistiveTc of 2.18 K and an inductiveTc of 2.10 K. The maximum residual resistance ratio was 17.7, the lowest specific resistance at room temperature was 57 µΩ-cm. During formation at higher temperatures or under pressure NbGe2 has an affinity for carbon and nitrogen, leading to the formation of niobium carbonitrides with aTc up to 16.2 K. PublishedTc values up to 16 K for NbGe2 are probably due to a contamination with niobium carbonitride.

Keywords

Nitrogen Grain Size Thin Film Evaporation Hexagonal 
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Copyright information

© Plenum Publishing Corporation 1984

Authors and Affiliations

  • M. Kloska
    • 1
  • E. L. Haase
    • 1
  1. 1.Kernforschungszentrum Karlsruhe GmbHInstitut für Nukleare FestkörperphysikKarlsruheFederal Republic of Germany

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