Abstract
Stoichiometric MoC has been calculated to have aT c of 16 K. To check this prediction, thin films of MoC x were prepared by sputtering both reactively with CH4 and using a composite Mo-C target. The preparation conditions were varied over wide ranges of composition, substrate temperature, Ar pressure, and bias voltage. The single-phase B1 structure is formed for substrate temperatures between −100 and 1100°C withT c values up to 12 K. TheT c rises with increasing lattice parametera 0. While films down to about 38 at % C were made, it was not possible to prepare samples with more than about 41 at % C in the B1 phase by this nonequilibrium technique. A linear extrapolation of theT c versusa 0 plot yields aT c value of about 26 K and ana 0 value of about 0.434 nm for stoichiometric composition. The temperature-dependent specific resistivity is discussed.
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Haase, E.L. Preparation and characterization of MoC x thin films. J Low Temp Phys 69, 245–255 (1987). https://doi.org/10.1007/BF00682660
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DOI: https://doi.org/10.1007/BF00682660