Journal of Low Temperature Physics

, Volume 47, Issue 1–2, pp 111–121 | Cite as

Surface structure of high-T c Nb3Ge films

  • S. Kuriki
  • T. Ohora


We have studied the surface structure of rf-sputtered Nb3Ge films by means of reflection electron diffraction and Auger electron spectroscopy. It is found that a tetragonal Nb5Ge3 phase exists, being partly disordered, at the surface of high-T c films, whereas A15 phase is predominant in the body of the film as proved by x-ray diffraction. The tetragonal surface phase is replaced by an amorphous phase in thin films of <1000 Å, where reducedT c 's as compared with those of thick films are found. Single A15 phase occurs at the surface of Ge-deficient films which have lowT c 's. Auger analysis has shown a pronounced Ge-rich layer with a depth of 60–100 Å, depending on film composition and thickness. At the top of the surface layer, Ge is enriched beyond a composition corresponding to Nb5Ge3. It is inferred that the Ge-rich layer is responsible for formation of the tetragonal phase.


Auger Electron Diffraction Surface Structure Thick Film Tetragonal Phase 
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Copyright information

© Plenum Publishing Corporation 1982

Authors and Affiliations

  • S. Kuriki
    • 1
  • T. Ohora
    • 1
  1. 1.Research Institute of Applied ElectricityHokkaido UniversitySapporoJapan

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