Abstract
The Einstein relation is studied for the diffusivity-mobility ratio of the carriers in ultrathin films of bismuth in the presence of crossed electric and magnetic fields at very low temperatures, and the numerical results are presented for McClure and Choi, hybrid, Cohen, Lax, and ellipsoidal parabolic energy bands by formulating the respective modified carrier energy spectra. It is found that this ratio increases with decreasing film thickness, increasing electron concentration, and decreasing magnetic field. The quantum oscillations of the ratio show up much more significantly in the McClure than in the other models.
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References
M. Sengupta and R. Bhattacharya,J. Phys. Chem. Solids 46, 9 (1985).
D. Shoenberg,Proc. R. Soc. Lond. A 170, 341 (1939).
B. Abeles and S. Mieboom,Phys. Rev. 101, 544 (1956).
M. P. Vechi, J. R. Pereira, and M. S. Dresselhaus,Phys. Rev. 14B, 298 (1976).
J. P. Michenaud, J. Heremans, M. Shayegan, and C. Haumont,Phys. Rev. 26B, 2552 (1982).
B. Lax,Rev. Mod. Phys. 30, 122 (1958).
R. J. Dinger and A. W. Lawson,Phys. Rev. 1, 2418 (1970);3, 253 (1971);7, 5215 (1973).
M. H. Cohen,Phys. Rev. 121, 387 (1961).
S. Takaoka, H. Kawamura, K. Murase, and S. Takano,Phys. Rev. 13B, 1428 (1976).
J. W. McClure and K. H. Choi,Solid State Commun. 21, 1015 (1977).
M. H. Chen and C. C. Wu,J. Low Temp. Phys. 64, 65 (1986).
C. C. Wu and C. J. Lin,J. Low Temp. Phys. 49, 83 (1985).
C. C. Wu and C. J. Lin,J. Low Temp. Phys. 57, 469 (1984).
J. W. McClure and D. Shoenberg,J. Low Temp. Phys. 22, 233 (1976).
J. W. McClure,J. Low Temp. Phys. 25, 527 (1976).
C. C. Wu and C. J. Lin,J. Low Temp. Phys. 57, 467 (1984).
M. Mondal, N. Chatterjee, and K. P. Ghatak,J. Low Temp. Phys. 66, 131 (1987).
S. N. Biswas and K. P. Ghatak,Fizika 18, 121 (1986).
K. P. Ghatak and M. Mondal,Z. Naturforsch. 41, 881 (1986).
A. A. Abrikosov,J. Low Temp. Phys. 8, 315 (1972).
G. G. Emch,J. Math. Phys. 14, 1775 (1973).
S. A. Hope, G. Feat, and P. T. Landsberg,J. Phys. A 14, 2377 (1981).
S. N. Mohammad,J. Phys. C 13, 2685 (1980).
H. Kroemer,IEEE Trans. Electron Devices 25, 850 (1978).
S. T. H. Abidi and S. N. Mohammad,Solid State Electron. 27, 1153 (1984).
P. T. Landsberg,Eur. J. Phys. 2, 213 (1981), and references cited therein.
K. P. Ghatak and M. Mondal,Thin Solid Films D 148, 219 (1987).
E. Spenke,Electronic Semiconductors (McGraw-Hill, 1958), p. 294.
B. R. Nag and A. N. Chakravarti,Phys. Stat. Sol. (a)67, K113 (1981).
M. Mondal and K. P. Ghatak,J. Mag. Mater. 66, 115 (1986).
W. Zawadzki, S. Klahn, and U. Merkt,Phys. Rev. B 33, 6916 (1986).
J. C. Hensel and M. Peter,Phys. Rev. 114, 411 (1959).
R. Dingle,Festkorperprobleme 15, 22–45 (1975).
W. Zawadzki and B. Lax,Phys. Rev. Lett. 16, 1001 (1966).
J. S. Blakemore,Semiconductor Statistics (Pergamon Press, London, 1962), p. 74.
M. Mondal and K. P. Ghatak,Phys. Stat. Sol. (b)126, K41 (1984).
T. I. Kamin and R. S. Muller,Solid State Electron. 10, 423 (1967).
G. D. Hatchel and A. E. Ruchli,IEEE Trans. ED-15, 437 (1968).
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Mondal, M., Chattopadhyay, N. & Ghatak, K.P. On the diffusivity-mobility ratio in ultrathin films of bismuth in the presence of crossed electric and magnetic fields. J Low Temp Phys 73, 321–329 (1988). https://doi.org/10.1007/BF00681985
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DOI: https://doi.org/10.1007/BF00681985