Journal of Applied Spectroscopy

, Volume 36, Issue 2, pp 248–249 | Cite as

Degradation of p-ν-n light-emitting diodes based on GaAs 〈O〉

  • A. A. Ptashchenko
  • V. I. Maryutin
Article
  • 8 Downloads

Keywords

Analytical Chemistry GaAs Molecular Structure 

Literature cited

  1. 1.
    A. R. Ferro and S. K. Ghandi, “Properties of gallium arsenide double injection devices,” J. Appl. Phys.,42, No. 10, 4015–4024 (1971).Google Scholar
  2. 2.
    A. A. Ptashchenko and V. I. Maryutin, “Mechanism of saturation of injection current and negative photoconductivity of p-ν-n structures based on GaAs 〈O〉,” Fiz. Tekh. Poluprovidn.14, No. 1, 3–6 (1980).Google Scholar
  3. 3.
    A. A. Ptashchenko, “Degradation of light-emitting diodes (review),” Zh. Prikl. Spektrosk.,33, No. 5, 781–803 (1980).Google Scholar
  4. 4.
    D. N. Vasil'kovskii, Z. A. Zaitsevskaya, O. D. Protopopov, and R. S. Senichkina, “Injected impurities and degradation of heteroepitaxial instruments,” Zh. Tekh. Fiz.,49, No. 11, 2383–2387 (1979).Google Scholar
  5. 5.
    J. G. Ruch and G. S. Kino, “Transport properties of GaAs,” Phys. Rev.,174, No. 3, 921–931 (1968).Google Scholar
  6. 6.
    P. I. Baranskii, V. P. Klochkov, and I. V. Potykevich, “Semiconductor Electronics,” Handbook [in Russian], Naukova Dumka, Kiev (1975), p. 704.Google Scholar
  7. 7.
    P. J. Dean and W. J. Choyke, “Recombination-enhanced defect reactions. Strong new evidence for an old concept in semiconductors,” Adv. Phys.,26, No. 1, 1–30 (1977).Google Scholar

Copyright information

© Plenum Publishing Corporation 1982

Authors and Affiliations

  • A. A. Ptashchenko
  • V. I. Maryutin

There are no affiliations available

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