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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 53, No. 1, pp. 116–121, July, 1990.
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Denisov, V.N., Mavrin, B.N., Podobedov, V.B. et al. Effect of photoexcited carriers on Raman spectra of a hydrogenated GaAs crystal implanted with silicon. J Appl Spectrosc 53, 772–776 (1990). https://doi.org/10.1007/BF00665152
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DOI: https://doi.org/10.1007/BF00665152