References
G. D. Watkins, J. W. Corbett, and R. M. Walker, J. Appl. Phys.,30, No. 8, 1198–1203 (1959).
G. D. Watkins, J. Phys. Soc. Jpn.,18, Suppl. II, 22–27 (1963).
G. D. Watkins, Radiation Damage in Semiconductors, Paris (1965), pp. 97–111.
R. S. Newman, Infrared Studies of Crystal Defects, London (1973).
G. D. Watkins, Phys. Rev. Lett.,36, No. 22, 1329–1331 (1976).
L. C. Kimerling, P. Blood, and W. M. Gibson, Def. Rad. Eff. Semicond., London (1979), No. 46, pp. 273–280.
C. A. Londos, Phys. St. Sol. (a),102, No. 2, 639–644 (1987).
J. C. Brabant, M. Pugnet, J. Barbolla, and M. Brousseau, J. Appl. Phys.,47, No. 11, 4809–4813 (1976).
R. D. Harris and G. D. Watkins, in: The Thirteenth International Conference on Defects in Semiconductors, L. C. Kimerling and J. M. Parsey (eds.), The Metallurgical Society of AIME, New York (1985), pp. 799–805.
J. R. Noonan, G. G. Kirkpatrik, and B. G. Streetman, J. Appl. Phys.,47, No. 7, 3010–3015 (1976).
K. Thonke, A. Tescher, and R. Sauer, Solid Sate Commun.,61, No. 4, 241–244 (1987).
A. V. Mudryi, A. I. Patuk, and I. A. Shakin, Fiz. Tekh. Poluprovodn.,25, No. 8, 1459–1462 (1991).
N. S. Minaev, A. V. Mudryi, M. P. Nemtsevich, and A. I. Patuk, Zh. Prikl. Spektrosk.,47, No. 4, 593–597 (1987).
K. Thonke, H. Klemisch, J. Weber, and R. Sauer, Phys. Rev. B,24, No. 10, 5874–5886 (1981).
G. Davies, Phys. Reports,176, Nos. 3–4, 83–188 (1989).
F. L. Vook and H. J. Stein, Appl. Phys. Lett.,13, No. 10, 343–346 (1968).
A. R. Bean and R. C. Newman, Solid State Commun.,8, No. 2, 175–177 (1970).
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 59, Nos. 5–6, pp. 516–519, November–December, 1993.
The authors thank A. S. Tel'nov, V. K. Tochilin, and S. A. Timoshenko for assistance in performing the irradiation of silicon crystals on an electron accelerator.
The work is supported by the Fundamental Research Foundation of the Republic of Belarus.
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Korshunov, E.P., Mudryi, A.V., Patuk, A.I. et al. Photoluminescence of silicon irradiated with electrons at 20 K. J Appl Spectrosc 59, 865–867 (1993). https://doi.org/10.1007/BF00664932
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DOI: https://doi.org/10.1007/BF00664932