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Characteristics of growth and radiative recombination of epitaxial layers InAsxP1−x(0<x<0.05) grown by gas-phase epitaxy on InP substrates

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Authors and Affiliations

  1. Institute of Electronics of the Academy of Sciences of the Belorussian SSR, Minsk

    V. A. Bykovskii, S. A. Manego & V. I. Osinskii

Authors
  1. V. A. Bykovskii
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  2. S. A. Manego
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  3. V. I. Osinskii
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Additional information

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 52, No. 1, pp. 121–126, January, 1990.

We than V. A. Korol' for assistance in preparing the samples and P. V. Ananich for making the electron diffraction pictures.

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Bykovskii, V.A., Manego, S.A. & Osinskii, V.I. Characteristics of growth and radiative recombination of epitaxial layers InAsxP1−x(0<x<0.05) grown by gas-phase epitaxy on InP substrates. J Appl Spectrosc 52, 93–96 (1990). https://doi.org/10.1007/BF00664790

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  • DOI: https://doi.org/10.1007/BF00664790

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