Journal of Applied Spectroscopy

, Volume 36, Issue 5, pp 516–520 | Cite as

Luminescence analysis of group III and V impurities in silicon

  • A. S. Kaminskii
  • L. I. Kolesnik
  • B. M. Leiferov
  • Ya. E. Pokrovskii


Silicon Analytical Chemistry Molecular Structure Luminescence Analysis Versus Impurity 
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Literature cited

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    A. S. Kaminskii, N. V. Alkeev. G. I. Voronkova, and Ya. E. Pokrovskii, “Luminescence of multiparticle exciton-impurity complexes in silicon and its use for determining impurity composition,” Izv. Akad. Nauk SSSR, Ser. Fiz.,42, 1170–1174 (1978).Google Scholar
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    A. S. Kaminskii, V. A. Karasyuk, and Ya. E. Pokrovskii, “Multiparticle impurity complexes in silicon, doped with boron, phosphorus, and antimony,” Zh. Eksp. Teor. Fiz.,74, 2234–2243 (1978).Google Scholar
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    H. Nakayama, T. Nishino, and Y. Hamakawa, “Analysis of the exciton luminescence of silicon for characterization of the content of impurities, Jpn. J. Appl. Phys.,19, 501–511 (1980).Google Scholar
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    N. I. Marunina and G. V. Sukhov, “Quantitative radioactivation analysis according to decay curves with internal standard,” Nauchn. Tr. Giredmeta22, 117–184 (1968).Google Scholar
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    P. J. Dean, J. R. Haynes, and W. F. Flood, “New radiative recombination processes involving neutral donors and acceptors in silicon and germanium,” Phys. Rev.,161, 711–729 (1967).Google Scholar

Copyright information

© Plenum Publishing Corporation 1982

Authors and Affiliations

  • A. S. Kaminskii
  • L. I. Kolesnik
  • B. M. Leiferov
  • Ya. E. Pokrovskii

There are no affiliations available

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