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Journal of Applied Spectroscopy

, Volume 36, Issue 5, pp 516–520 | Cite as

Luminescence analysis of group III and V impurities in silicon

  • A. S. Kaminskii
  • L. I. Kolesnik
  • B. M. Leiferov
  • Ya. E. Pokrovskii
Article

Keywords

Silicon Analytical Chemistry Molecular Structure Luminescence Analysis Versus Impurity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Literature cited

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    A. S. Kaminskii, N. V. Alkeev. G. I. Voronkova, and Ya. E. Pokrovskii, “Luminescence of multiparticle exciton-impurity complexes in silicon and its use for determining impurity composition,” Izv. Akad. Nauk SSSR, Ser. Fiz.,42, 1170–1174 (1978).Google Scholar
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    A. S. Kaminskii, V. A. Karasyuk, and Ya. E. Pokrovskii, “Multiparticle impurity complexes in silicon, doped with boron, phosphorus, and antimony,” Zh. Eksp. Teor. Fiz.,74, 2234–2243 (1978).Google Scholar
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    H. Nakayama, T. Nishino, and Y. Hamakawa, “Analysis of the exciton luminescence of silicon for characterization of the content of impurities, Jpn. J. Appl. Phys.,19, 501–511 (1980).Google Scholar
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    N. I. Marunina and G. V. Sukhov, “Quantitative radioactivation analysis according to decay curves with internal standard,” Nauchn. Tr. Giredmeta22, 117–184 (1968).Google Scholar
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    P. J. Dean, J. R. Haynes, and W. F. Flood, “New radiative recombination processes involving neutral donors and acceptors in silicon and germanium,” Phys. Rev.,161, 711–729 (1967).Google Scholar

Copyright information

© Plenum Publishing Corporation 1982

Authors and Affiliations

  • A. S. Kaminskii
  • L. I. Kolesnik
  • B. M. Leiferov
  • Ya. E. Pokrovskii

There are no affiliations available

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