Abstract
The variation of the superconducting transition temperatureT chas been studied in the Nb3Al 1−x Ge x system for0≤x≤1 for samples produced by rf sputtering onto heated substrates. The effect that different sputtering gas pressures have upon the rate of energy loss of the sputtered atoms due to collisions with neutral sputtering gas atoms is considered. Also considered is how thermalization can be achieved in the fewest number of collisions by matching the mass of the sputtering gas atoms to that of the sputtered atoms. For the case of Nb 3 (Al-Ge) we show that it is advantageous to use a mixture of sputtering gases so that the light Al atoms can be thermalized as well as the heavier Nb and Ge atoms. It is also thus shown that the same sputtering conditions that are optimal for forming high-T cNb3Ge onto heated substrates are not optimal for forming high-T cNb 3 Al.
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Supported by CUNY FRAP and National Science Foundation DMR 74-18138.
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Cadieu, F.J., Chencinski, N. The synthesis of the Nb3(Al-Ge) system by sputtering. J Low Temp Phys 28, 535–549 (1977). https://doi.org/10.1007/BF00661448
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DOI: https://doi.org/10.1007/BF00661448