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Radiative recombination of InP and In1−xGaxP (0<x<0.03) epitaxial films grown by gas-phase epitaxy

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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 44, No. 4, pp. 616–619, April, 1986.

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Manego, S.A., Osinskii, V.I., Gruzdev, Y.A. et al. Radiative recombination of InP and In1−xGaxP (0<x<0.03) epitaxial films grown by gas-phase epitaxy. J Appl Spectrosc 44, 378–380 (1986). https://doi.org/10.1007/BF00661054

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  • DOI: https://doi.org/10.1007/BF00661054

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