Advertisement

Journal of Applied Spectroscopy

, Volume 44, Issue 2, pp 164–167 | Cite as

Influence of technological conditions upon the luminescence properties of ZnTe-ZnSe heterostructures grown by liquid-phase epitaxy

  • V. M. Skobeeva
  • V. V. Serdyuk
  • L. N. Semenyuk
  • N. V. Malushin
Article

Keywords

Analytical Chemistry Molecular Structure Luminescence Property Technological Condition 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Literature cited

  1. 1.
    S. Fujita, H. Mimoto, and T. Naguchi, J. Appl. Phys.,50, No. 2, 1079 (1979).Google Scholar
  2. 2.
    A. N. Georgobiani, Z. P. Ilyukhina, B. N. Levanovich, and N. V. Serdyuk, Fiz. Tekh. Poluprovodn.,18, No. 3, 408 (1984).Google Scholar
  3. 3.
    Yu. V. Bochkarev, A. N. Georgobiani, Z. P. Ilyukhina, et al., Kratkie Soobshch. Fiz., No. 8, 22 (1983).Google Scholar
  4. 4.
    A. N. Georgobiani, M. B. Kotlyarevskii, V. V. Lastovka, et al., Physics and Technical Applications of A2B6 Semiconductors [in Russian], Vol. 3, Vil'nyus (1983), p. 39.Google Scholar
  5. 5.
    X. W. Fan and J. Woods, IEEE Trans. Electron. Devices,ED-28, No. 4, 428 (1981).Google Scholar
  6. 6.
    H. Yamaguchi and A. Yamamoto, Jpn. J. Appl. Phys.,16, No. 1, 77 (1977).Google Scholar
  7. 7.
    V. A. Korotkov, A. I. Nyaga, A. V. Simashkevich, and M. N. Tsaller, Fiz. Tekh. Poluprovodn.,15, No. 9, 1701 (1981).Google Scholar
  8. 8.
    S. Fujita, S. Arai, F. Moriai, and T. Sakaguchi, Jpn. J. Appl. Phys.,12, No. 7, 233 (1973).Google Scholar
  9. 9.
    P. A. Gashin, P. A. Sherban, and A. V. Simashkevich, J. Luminescence,15, No. 1, 109 (1977).Google Scholar
  10. 10.
    V. V. Serdyuk and V. M. Skobeeva, Liquid Epitaxy and some Physical Properties of Zinc Telluride Films [in Russian], Odessa (1980), 13 p. Manuscript submitted by the Odessa University; deposited at the All-Union Institute of Scientific and Technical Information on February25, 1980, No. 702–80.Google Scholar
  11. 11.
    M. Aven and R. Woodbury, Appl. Phys. Lett.,1, No. 3, 53 (1962).Google Scholar
  12. 12.
    R. N. Bhargava, J. Cryst. Growth,59, No. 1, 15 (1982).Google Scholar
  13. 13.
    M. K. Sheinkman and G. L. Belen'kii, Fiz. Tekh. Poluprovodn.,2, No. 11, 1635 (1968).Google Scholar
  14. 14.
    G. B. Stringfellow and R. H. Bube, J. Appl. Phys.,39, No. 8, 3657 (1968).Google Scholar
  15. 15.
    Yu. F. Vaksman, Author's Abstract of Dissertation in Physics and Math, Odessa (1977), p. 16.Google Scholar
  16. 16.
    A. P. Chebanenko, Author's Abstract of Dissertation in Physics and Math, Odessa (1979), p. 17.Google Scholar
  17. 17.
    V. E. Lashkarev, A. V. Lyubchenko, and M. K. Sheinkman, Nonequilibrium Processes in Semiconductors [in Russian], Naukova Dumka, Kiev (1981).Google Scholar
  18. 18.
    V. V. Serdyuk, V. M. Skobeeva, and N. V. Malushin, Zh. Prikl. Spektrosk.,35, No. 4, 737 (1981).Google Scholar

Copyright information

© Plenum Publishing Corporation 1986

Authors and Affiliations

  • V. M. Skobeeva
  • V. V. Serdyuk
  • L. N. Semenyuk
  • N. V. Malushin

There are no affiliations available

Personalised recommendations